PART |
Description |
Maker |
KBE00S009M-D411 KBE00S009M |
From old datasheet system 1Gb NAND x 2 256Mb Mobile SDRAM x 2
|
SAMSUNG[Samsung semiconductor]
|
CY7C68034-56LTXC CY7C6803309 CY7C68034-56LFXC |
EZ-USB NX2LP-FlexFlexible USB NAND Flash Controller FLASH MEMORY DRIVE CONTROLLER, QCC56 EZ-USB NX2LP-Flex Flexible USB NAND Flash Controller
|
Cypress Semiconductor, Corp.
|
KM29W8000IT |
1M x 8 Bit NAND Flash Memory(1M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
H27U518S2CTR-BC H27U518S2C |
512 Mbit (64 M x 8 bit) NAND Flash 512 Mb NAND Flash
|
Hynix Semiconductor
|
HY27UG088G5B HY27UG088GDB HY27UG088G5B-TIP |
8Gb NAND FLASH FLASH 3.3V PROM, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48
|
Hynix Semiconductor, Inc.
|
HY27UF081G2A HY27UF161G2A-TPCS HY27UF161G2A-TPCB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 64M X 16 FLASH 3.3V PROM, 25000 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
AN1266 |
BENCHMARKING FLASH NOR AND FLASH NAND MEMORIES
|
SGS Thomson Microelectronics
|
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3 256Mb (32M x 8) PC133 3-3-3 256Mb (32M x 8) PC100 2-2-2 56Mb的(32M的8)PC100-2-2 x16 SDRAM x16内存
|
Toshiba, Corp. SIEMENS AG
|
K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G0 |
-2M x 8 Bit NAND Flash Memory 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|